A Procedure for Measuring the Saturation Current and Ideality Factor of a Diode, along with Measurements on various diodes
By Ben H. Tongue
Quick Summary: A schematic and operational instructions are given for a device for use in measuring Saturation Current and Ideality Factor of a diode. Measurements of various detector diodes are included.
The Saturation Current and Ideality Coefficient of a diode can be determined by measuring an applied junction voltage along with the associated current flow at two different voltages. These two data pairs are then substituted into the Shockley diode equation to create two simultaneous equations in Is and n, and then solved for Is and n. Since the equations include exponential functions, they can not be solved by ordinary algebra. Numerical methods must be used.
The Shockley diode equation at 25 degrees C. is: Id = Is*(exp(Vd/(0.0256789*n))-1) Amps. Id = Diode Current (amps), Is=Saturation Current (amps), Vd = Diode Voltage, n = Ideality Coefficient. The series resistance Rs of the diode is ignored because the measurement currents are so low that the voltage drop across Rs is negligible. Measurements have shown that Is and n of point contact germanium diodes can vary with current, but are relatively constant, down to very low currents, when the current is under six times Is. Silicon p-n junction diodes exhibit values of Is and n that vary with current. The values for Is and n of Schottky diodes are quite constant over the range of currents used in ordinary crystal radio set reception.
A convenient set of measuring currents is about 6*Is and 3*Is. Substituting Id = 6*Is, then Id = 3*Is into the Shockley and solving for Vd yields: For Id = 6*Is, Vd = 0.05000*n volts. For Id = 3*Is, Vd = 0.03561*n volts. The value of n will probably be between 1.0 and 1.2 for the type of diodes used in crystal radio sets, so use 1.1 in determining the applied voltage to use. Suggested voltages to use are about 0.055 and 0.039 volts, although other values may be used.
S1 is a triple pole double throw switch, S2 is a push button momentary-contact SPST switch. DVM is a digital voltmeter with 10 Meg input resistance having a 200 mV range setting. S3 is a range switch that enables greater precision when using a conventional 3 1/2 digit DVM. It is also used when measuring diodes having a high Is. R2 is used for coarse setting of the diode voltage. R1 is a ten turn precision 20k pot such as part # 594-53611203 from Mouser. It is used for fine setting of the diode voltage.
Procedure for Measuring Is and n:
There is currently available on the Web, a program from Polymath Software at: http://www.polymath-software.com/. This program has many capabilities, and among them is a nonlinear equation solving capability. A free demo copy of the latest program is available for download, but is limited to 20 uses. After that, for more usage, you have to buy it.
Some programmable pocket calculators include a nonlinear equation solver. One calculator that has one is the HP 32S Scientific Calculator. A program to solve for n and Is takes only 28 steps of program memory and is here.
Mike Tuggle posted on 'The Crystal Set Radio Club' the following simple procedure for determining Is and n by using a spreadsheet. "In lieu of an equation solver package, the Schottky parameters can be solved for by simple trial-and-error. This is easily done with an ordinary spreadsheet, like Excel or Lotus. For the two measurement points, (Id1, Vd1) and (Id2, Vd2), set up the spreadsheet to calculate: Id2[exp(Vd1/0.0257n) - 1] and, Id1[exp(Vd2/0.0257n) - 1]. Then experimentally plug in different trial values of n, until the two expressions become equal. This gives the correct value of n. Now, plug this value of n into: Is = Id1 / [exp(Vd1/0.0257n) - 1] or, Is = Id2 / [exp(Vd2/0.0257n) - 1] to get the correct value of Is." An Excel spreadsheet constructed as Mike suggested is here. An example from data taken on an Agilent HBAT-5400 is entered, for reference, on line 2. Line 3 may be used for calculations using data from other diodes. Column H automatically calculates a value for Is each time n is changed. All one has to do is enter the values as described above in columns A through E and hit enter.
Caution: If one uses a DVM
to measure the forward voltage of a diode having a high saturation current,
a problem may occur. If the internal resistance of the DC
source supplying the current is too high, a version of the sampling
voltage waveform used in the DVM may appear at its terminals and be
rectified by the diode, thus causing a false reading. One can
easily check for this condition by reducing the DC source voltage to
zero, thus leaving only the internal resistance of the source in parallel
with the diode, connected across the terminals of the DVM. If
the DVM reads more than a tenth of a millivolt or so, the problem may
be said to exist. It can usually be corrected by bypassing the
diode with a ceramic capacitor of between 1 and 5 nF, preferably, an
NPO type. I use a 0.047 uF NPO multi-layer ceramic cap from Mouser
Electronics. Connect the capacitor across the diode with very
short leads, or this fix may not work.
Note: A simplified method of determining the Saturation Current of a diode, if the Ideality Factor is estimated in advance is shown in Section #2 of Article #4.
Summary of measurements on some diodes:
The following charts show typical values for Is and n for diodes that might be used in crystal radio sets. One can see, for any particular diode, that Is and n do not vary by much over a moderate current range. Therefore, they may be considered to be dynamically constant when receiving a signal. Each value of n and Is is calculated from two voltage/current pairs as described above. The diode current (Id) given for each of the n, Is pairs is the geometric mean of the two currents used in the measurement. A Fluke model '89 IV' 4-1/2 digit DVM was used to enable measurements down to as low as 15 nA on some diodes. Noise problems cause some measurement error at low currents. That is the reason for the fluctuations in some of the readings. Values of n very close to 1.0 or below are obvious measurement errors. Those low values for n should have come out somewhat higher and the associated values of Is, also higher.
Note that the germanium diodes show an unexpected tendency to increased values for Is and n at the higher currents. The 1N4148 silicon p-n junction shows the expected increase of Is and n at lower currents. The Schottky diodes seem to have pretty constant values of Is and n across the current ranges measured. Experiments described in Article #27 indicate that the measured values of Is and n for silicon Schottky diodes tested here, when used as detectors, remain at the measured values at rectified currents so low that a voice signal is barely readable. This is not necessarily true for all germanium diodes.
* This Infineon diode has an unusually high series resistance of 130 ohms. The voltage drop across this resistance is low enough in all the measurements to be ignored, except for the highest current one. There, a correction for the voltage drop was made.
A rare germanium diode that seems to be ideal for many crystal radio set designs is the FO 215, branded ITT. A search of the Internet has not turned up a manufacturer's datasheet. ITT is not in the germanium diode business anymore, but from the Internet search it appears that the original company was a German company named ITT Intermetall. Some of their semiconductor business became ITT Semiconductors. This was later sold, around 1997 to General Semiconductor Industries. That business was later sold to Vishay. One source indicated that General Instruments was also one of the intermediate owners. Averages of measurements on three samples of the FO 215 are: Is=109 nA and n=1.02. These measurements were made at an average current of about 250 nA. Interesting note: The average Is of the FO 215 diodes is about equal to the geometric mean of that of the Agilent 5082-2835 and a typical 1N34A. I obtained my FO 215 diodes from Mike Peebles at: http://www.peeblesoriginals.com/ .
Article #27 shows detector measurements of how diodes having different values of Is and n perform as weak signal detectors when impedance matched at both input and out put.
#16 Published: 03/28/01; Revised: 02/10/2004